LaserDiode Discrete Mode

EP2000-DM-B Series

   The EP2000-DM-B laser diode module is a costeffective, highly coherent laser source. The patented discrete mode(DFB-like) ridge waveguide technology and epistructure design isused to deliver an InP-based strained laser diodesource emitting at a wavelength of 2.0μm with high SMSR. TheDiscrete Mode laser diode chip is packaged in an industry standard,hermetically sealed 14 pin butterfly package with integratedoptical isolator, thermo-electric cooler (TEC), monitor photodiodeand thermistor.

KeyFeatures

Applications

Excellent reliability

High performance gassensing

Mode-Hop free tuning>2nm

Seed Laser

Integrated opticalisolator

Narrow linewidth<2MHz

Optical and electrical characteristics: (T =25°C)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

LASERDIODE

Output Power in Fibre

Pf

1.5

1.75

2

mW

Centre Wavelength

λcen

1950

2001

2150

nm

Threshold Current

Ith

-

20

40

mA

Operating Current

Iop

70

120

Forward Voltage

Vf

1.3

1.6

V

Side Mode SuppressionRatio

SMSR

30

-

dB

Temperature TuningCoefficient

0.1

nm/K

Current TuningCoefficient

0.01

nm/mA

Efficiency

η

0.02

0.03

mW/mA

Optical Isolation

ISO

MONITORDIODE*

Monitor Photo Current

Im

0.2

0.4

0.8

Monitor Operating Voltage

Vm

5.5

Monitor Dark Current (at 5VVDR)

Imd

< 0.2

μA

Absolute Maximum Ratings(Tsub=25°C)

Parameter

Symbol

Ratings

Units

Laser diode reversevoltage

VR

2

Laser diode forwardcurrent

IF

120

Photodiode reversevoltage

VDR

20

Peltier current

IP

1.2

A

Operating casetemperature

Tcase

-20 to 65

°C

Storage temperature

Tstg

-40 to 85