現(xiàn)貨phi原裝進(jìn)口可控硅bt169

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3. ordering information
4. limiting values
[1] although not recommended, off-state voltages up to 800 v may beapplied without damage, but the thyristor may switch to theon-state.
the rate of rise of current should not exceed 15 a/ms.
table 2: ordering information
type number package
name description version
bt169b - plastic single-ended leaded (through hole) package; 3leads sot54
bt169d
bt169g
table 3: limiting values
in accordance with the absolute maximum rating system (iec60134).
symbol parameter conditions min max unit
vdrm, vrrm repetitive peak off-state voltages
bt169b [1] - 200 v
bt169d [1] - 400 v
bt169g [1] - 600 v
it(av) average on-state current half sine wave;
tlead ￡ 83 °c;
see figure 1
- 0.5 a
it(rms) rms on-state current all conduction angles;
see figure 4 and 5
- 0.8 a
itsm non-repetitive peak on-state current half sine wave;
tj = 25 °c prior to
surge;
see figure 2 and 3
t = 10 ms - 8 a
t = 8.3 ms - 9 a
i2t i2t for fusing t = 10 ms - 0.32 a2s
dit/dt repetitive rate of rise of on-state
current after triggering
itm = 2 a; ig = 10 ma;
dig/dt = 100 ma/ms
- 50 a/ms
igm peak gate current - 1 a
vgm peak gate voltage - 5 v
vrgm peak reverse gate voltage - 5 v
pgm peak gate power - 2 w
pg(av) average gate power over any 20 ms period - 0.1 w
tstg storage temperature -40 +150 °c
tj junction temperature - 125 °

本產(chǎn)品的應(yīng)用范圍是開關(guān)，品牌是PHILIPS/飛利浦，型號(hào)是BT169，材料是硅(SI)，封裝形式是TO92